超低介电常数的SiCOH薄膜及其制造方法

Ultra low k (ulk) SiCOH film and manufacture method thereof

Abstract

本发明涉及一种显示出提高的弹性模量和硬度的多相超低介电常数的薄膜,以及制造该薄膜的多种方法。这种超低介电常数的介电薄膜含有分别用(104),(103),(102)和(101)表示的硅原子,碳原子,氧原子和氢原子,所述薄膜具有约为2.4或以下的介电常数值,纳米级的小孔或者空穴,具有约为5或更大的弹性模量值,具有约为0.7或更大的硬度值。优选的薄膜含有硅原子,碳原子,氧原子和氢原子,且具有约为2.2或以下的介电常数值,具有纳米级的小孔或者空穴,具有约为3或更大的弹性模量值,和具有约为0.3或更大的硬度值。这些薄膜由作为“主”基体的第一相(100)和基本上由碳原子和氢原子构成的第二相(105)组成,其中“主”基体是由氢化的氧化硅碳(SiCOH)形成的无规网络。

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Patent Citations (7)

    Publication numberPublication dateAssigneeTitle
    US-2002127416-A1September 12, 2002Honeywell International Inc.Deposition of fluorosilsesquioxane films
    US-2002142579-A1October 03, 2002Vincent Jean Louise, Mark Leonard, Withers Howard Paul, Beck Scott Edward, Vrtis Raymond NicholasOrganosilicon precursors for interlayer dielectric films with low dielectric constants
    US-6312793-B1November 06, 2001International Business Machines CorporationMultiphase low dielectric constant material
    US-6361837-B1December 31, 1969
    US-6361837-B2March 26, 2002Advanced Micro Devices, Inc.Method and system for modifying and densifying a porous film
    US-6437443-B1August 20, 2002International Business Machines CorporationMultiphase low dielectric constant material and method of deposition
    US-6441491-B1August 27, 2002International Business Machines CorporationUltralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device and electronic device containing the same

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    Publication numberPublication dateAssigneeTitle